电力电子技术英文版 chapter09

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1、PPoowwererEEllececttrronionicscsChapter9PracticalApplicationIssuesofPowerSemiconductorDevicesOuOuttlliinene9.1Gatedrivecircuit9.2ProtectionofpowersemiconductordevicesElectronics9.3SeriesandparallelconnectionsofpowersemiconductordevicesPower29.19.1GGaatteeddrriivvececiirrccuuititBasicfunctionofga

2、tedrivecircuit:Generategatesignalstoturn-onorturn-offpowersemiconductordeviceaccordingtothecommandingsignalsfromthecontrolcircuit.ElectronicsOtherfunctionsofgatedrivecircuit:Reduceswitchingtime(includingturn-ontimeandturn-offtime)Reduceswitchingloss(includingturn-onlossandturn-offloss)andimprove

3、efficiencyPowerImproveprotectionandsafetyoftheconverterGatedrivecircuitsprovidedbypowersemiconductormanufacturersandIntegratedgatedrivechipsaremoreandmorewidelyused.3ElectricalisolationinthegatedrivecircuitGatedrivecircuitusuallyprovidestheelectricalIIDCisolationbetweencontrolEcircuitandpowersta

4、ge.RR1ElectronicsUinTwowaystoprovidePhotoUtransistoroutelectricalisolationLED–Optical•Optocoupler,fiberopticsPower–MagneticSchematicofanoptocoupler•Transformer4ThyristorgatecurrentpulserequirmentsShapeofgatecurrentpulsewaveform:–EnhancedleadingpartMagnituderequirement(fortheenhancedleadingElectr

5、onicsIMpartandtheotherpart)IWidthrequirement(forthetenhancedleadingpartandt1t2t3t4thewholepulse)PowerPowerofthetriggeringIdealgatecurrentpulsewaveformforthyristorssignalmustbewithintheSOAofthegateI-Vcharacteristics5Typicalthyristorgatetriggeringcircuit+E+EVDR12TM2413VDRVDElectronics1R3InputfromR

6、V2controlcircuit1PowerV26TypicalgatesignalandgatedrivecircuitforGTOuGCVDR231Ot2ElectronicsVDR2GTOVD1Vi1LGN2CCVRO50kHzN1323t50V1V3NCRPower344VD47AtypicalgatedrivecircuitforIGBTbasedonanintegrateddriverchip4VCC4.7kWDetectionFastrecoverydiode14circuit1Sensing8t≤0.2msrr1TimerandElectronicsresetcircu

7、it+5V14530VInterface3.1W5u4circuitoM57962L+15Vui13Turn-offError1100mF8circuitindicating100mF1366VEE-10VPowerM57962Lintegrateddriverchip89.29.2PrPrototececttiiononooffppoowweerrsesemmiciconduonducctotorrddeevvicesicesProtecti