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ID:33387537
大小:3.34 MB
页数:70页
时间:2019-02-25
《zno纳米线的制备与其场发射性能的分析》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、摘要水热3小时时,生长的是有尖椎的ZnO纳米棒,此种纳米结构稳定性要强于线状结构,但发射效能有一定差距。5.以制备的ZnO纳米线作为阴极,用清洗后的硅片作为阳极,制成一个类似二极管结构的场发射器件,并测试其场发射特性。通过测得的数据绘制了场发射的J-E和F-N曲线,还得到了样品的阀值电场和开启电场。在上述基础上,通过得到的J-E和F-N曲线和样品的电子扫描电镜结果分析了其对样品场发射特性的影响因素,一维ZnO纳米线场发射主要受材料的场屏蔽效应和几何形貌的影响,并通过增强因子的理论公式得到,场增强因子的大小直接决定场发射特性好坏,这基本与实验结果一致。关键字:射频磁控溅射,水热生长法
2、,ZnO纳米线,场发射特性II万方数据ABSTRACTABSTRACTTheone-dimensionalnanomaterialswithmanyuniquepropertiesisusedinpreparationforfieldemissioncoldcathodematerial,ithadtogaintheattentionandconcernbyalargenumberofdomesticandforeignresearchers.FieldemissionpropertiesofhydrothermalsynthesisofZnOnanowireiscurrently
3、ahottopicinthefieldofvacuummicronanoelectronic.Oneofthemainreasonsistheuseofhydrothermalmethodcanbeimplementedinnanowire-temperaturepreparationoflargearea(<100°C)ondifferentsubstratessuchasglassandmetal,itisveryconducivetothedevelopmentofvacuummicro-nanoelectronicstructureelectronicdevicesandf
4、ieldemission.Zincoxide(ZnO)isII-VIfamilydirectandwidebandgapcompoundsemiconductormaterialhavingexcellentchemicalandphysicalproperties,becauseofitssuperioraspectratio,itisverysuitableforapplicationinthefieldemissiondevice.Therefore,thestudyofthefieldemissionpropertiesofzincoxidenanowiresisveryn
5、ecessary,andhasconsiderablepracticalsignificanceandapplicationvalue.Thisarticlewaspreparedone-dimensionalzincoxidenanowireswithusingRFmagnetronsputteringandhydrothermal,theirresearchconductedfieldemissionproperties.Workandresearchmainlyincludesthefollowingaspects:1.Ananalysisofthemechanismofth
6、eone-dimensionalZnOnano-arraytoimprovethefieldemissioncharacteristics,andbycontrast,todiscusstheadvantagesanddisadvantagesofZnOnanowirescomparedtootherfieldemissionmaterials.2.Describesthepreparationmeansoftheone-dimensionalZnOnanowirearrays,selecthydrothermalsynthesisofZnOnanowirearraystructu
7、re,samemolofzincoxidepowderandhexamethylenetetramineashydrothermalreactionsolutionsolute.3.Itusedhydrothermalmethodofsynthesisofvariousmorphologiesofzincoxide(ZnO)nanowiresonsiliconsubstratewithzincoxidethinfilmscoated.ZnOthinfilmisused
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