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ID:33099704
大小:7.21 MB
页数:59页
时间:2019-02-20
《基于饱和压降测量的igbt功率模块状态评估方法分析》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、重庆大学硕士学位论文英文摘要temperaturebydesignsinglepulsetemperaturecabinetexperimentalplatform.ThencombinedwithexperimentandsimulationinSaber,thethesisdemonstratesthecorrectnessofthemethoditapplied.⑨ToacceleratethechangingofIGBTjSstate,thethesisdesignedanaccelerat
2、edageingexperimentalplatform.TheprocedureisthatatfirstlargecurrentisappliedtodevicestoensureapromptriseofjunctiontemperaturetoreachitsmaximvaluecausedbytheconductionlossofIGBTandthencompulsorycoolingtodevicesisconductedafterinterruptofpowersupply.Asare
3、sult,junctiontemperaturewillfluctuaterapidlyinalargerangetobringaboutgreatthermalstresstothemodule,whichrealizesacceleratedagingofbondwiresandsolderlayers.Theplatformlayssolidfoundationforupcomingstateassessmentresearches.④Becausethereisyetnostandardiz
4、edproductsindomesticmarketandlongdurationofmanufacturing,thethesisadoptedanothermethodtOimitatechangesofacceleratedaging.First,unsealthemoduleandthecutoffpartofftheparalleledbondwiresOilIGBTchiptoapproximatethechangesledbynormalacceleratedaging.Threedi
5、mensionalsurfaces圪esat项厶,rj)arecomparedbeforeandafterthecuttingofbondwires.Basedontheanalysisofthedifferencebetweenthetwosurfaces,thethesissummarized:changesofsaturationvoltagedrop『/cesatatcertainoperatingpointcanbeatruereflectionofchangesinthemodule’S
6、state.Aftercomparingthismethodtoapreviousmethod,wegot:thismethodcanavoidamiscarriageofjusticeinonthehealthstatuSofthedevices.Keywords:InsulatedGateBipolarTransistor,JunctionTemperatureMeasurement,StateAssessment,AcceleratedAging,SaturationVoltage重庆大学硕士
7、学位论文目录目录中文摘要⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯■⋯⋯⋯⋯⋯..I英文摘要⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯j⋯⋯⋯⋯⋯⋯⋯⋯III1绪论⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯..11.1研究背景及意义⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯.11.2状态评估的国内外研究现状⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯.51.2.1国内研究现状⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯51.2.2国外研究现状⋯⋯⋯⋯⋯⋯
8、⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯61.3本文研究内容⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯.92IGBT模块的老化失效与状态评估的关系及结温的影响⋯⋯⋯⋯⋯112.1引言⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯112.2IGBT模块的老化失效机理⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯.112.2.1与模块封装有关的失效⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯一112.2.2与芯片有关的失效⋯
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