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1、ABSTRACTAbstractHgi.xMnxTehasverysimilarstructureandoptical-electronicpropertiesasthatofHg,.,Cd.Te,butpossessessomesuperioritiesoverHg1..Cd.Teinsomeaspects,therefore,Hg,_,MnxTebecomesaperspectivesubstituteforHgi_xCdxTeasIRdetectormaterial.Preparationofhig
2、hqualityHgi_,Mn,Tecrystalisofvitalimportancetothedevelopmentofthematerialandrelativedevice.SeveralingotsofHgi_xMnxTewereproducedbyBridgmanmethod,andtheiropticalandelectronicalpropertiesweretested.Themeasurementsoncompositiondistribution,carrierconcentrati
3、onandmobilityrevealedthatmostofitspropertiescouldnotsatis勿therequirementsofIRdetectorattheas-grownstate.Furthertreatmentsarenecessary.TheelectronicpropertiesofHg1.xMnxTearedominatedbydefects,includingnativepointdefects(vacancies,interstitials,antisites,an
4、dcomplexes)，extendeddefects(alltypesofdislocations,grainboundaries,precipitates,meltspots,etc.)，andundesiredimpurities.AnewetchantsuitableforHgi_,Mn.Tehasbeenfound.Thisetchantcanshowdiferentdefects,suchasdislocations,grainboundaries,twins,Te-richinclusion
5、sandprecipitatesetc.,ondiferentplanes.ObservationonthevariationofsurfacemorphologyduringtheetchingprocessindicatesthatthegrainboundaryandTeprecipitateswillbeshownearlierthanthedislocations.SlicesofHg,.xMnxTecrystalswereannealedunderlowtemperatureinHgatmos
6、pheretoimprovetheirelectronicproperties.Theelectronicpropertiesofannealedslicesandcoterminousnon-annealedsliceswereevaluatedbyHallmeasurement.Theas-grownHgl_xMnxTecrystalsareusuallyP-typesemiconductors,whichcanbesuccessfullyconvertedintoN-typebyannealingu
7、ndergivenconditions.KeyWords:Hg1,MnxTe,Bridgmanetching,etch-pitmorphology,dislocation,vacancieselectricproperties第一章文献综述第一章文献综述1.1研究背景及意义在现代战争中，电子技术的重要性日益突出。对于作战飞机，要求具有全天候作战能力及先进的机载武器系统。因此，红外制导、红外夜视等技术成为影响作战飞机性能的重要因素。这些红外技术的核心是红外探测器件，而红外探测器件发展的基础是先进的红外敏感材
8、料。实际上，红外技术发展的历史就是不同红外材料开发应用的历史[1。在不同历史阶段开发的主要红外材料如图1.1所示。几工M山1O01匡切0a-式记边的00..卜。卜夏1卜勺1癌POuUPU仍弓的XX}r口工O二一。工口工︺口Q-的口盆}}}}!}}}}194019501960197019801990图1.1红外材料发展历史20世纪60年代中期以前，人们已先后开发出硫化铅(PbS)、锑化锢(InSb)及锗掺汞(Ge:Hg)红外探测
