锂离子电池锡基负极材料的制备与改性研究

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1、AbstractThegraphitematerialsthatwasusedascommonlycommercializedanodeinlithiumionbatteryhasalreadyapproacheditstheoreticalcapacityof372mAh/g,whichcan'tmeettherequirementsofhighcapacity.Therefore,tin-basedmaterialshaveattractedgreatinterestinrecentyearsowningtotheirhightheoretical

2、capacity(992mAh/g).However,themostimportantproblemintin-basedanodesisitspoorcyclabilityduetolargevolumechangeduringthecharge-dischargeprocess.Toovercomethisproblem,inthisworkweaddcarbonnanotubes(CNT)intothealloymaterialsandprepareporousstructuretoimprovethecycleperformanceoftin-

3、basedmaterials,theresearchworkandresultsaregivenasfollowing:TheSn-Cualloy-CNTcompositewerepreparedbyanelectrodepositionprocess.(1)AddingwelldispersedCNT(lengh<2μm)solutiontotheplatingsolution,Sn-Cualloy-CNTcompositewasobtained.XRDresultsshowedthattheelectrodepositedSn-Cualloy-CN

4、TcompositeconsistsmainlyofCu6Sn5、CNTandCu3Snphase.ElectrochemicaltestsindicatedthatthecycleperformanceofSn-Cualloy-CNTelectrodeisbetterthanthatofSn-Cuelectrode.(2)Addingcarbonnanotubespowders(lengh>2μm)whichneedtreatmentpreviouslytotheplatingsolution,theSn-Cualloy-CNTcompositewa

5、salsoobtained.XRDresultsshowedthattheelectrodepositedSn-Cualloy-CNTcompositeconsistsmainlyofCu6Sn5andasmallamountofSnphase.ElectrochemicaltestindicatedthatthecycleperformanceofSn-Cualloy-CNTelectrodehasbeenimprovedbycomparrionwithSn-Cualloy.SEMimagesshowedthatcarbonnanotubesarei

6、ntertwinedintomeshstructure,theSn-CualloyparticlesweredepositdontheCNTs.TheSn-Coalloy-CNTcompositewerepreparedbyanelectrodepositionprocess.(1)AddingwelldispersedCNT(lengh<2μm)solutionanddifferentconcentrationsofhexadecyltrimethylammoniumbromide(CTAB)totheplatingsolution,Sn-Coall

7、oy-CNTcompositewasobtainedthroughelectrodeposition,thecycleperformanceofSn-Coalloy-CNTelectrodeisimprovedbycomparisionwithSn-Coalloy.(2)Addingcarbonnanotubespowders(lengh>2μm)whichneedtreatmentpreviouslytotheplatingsolution,Sn-Coalloy-CNTcompositewasobtainedthroughelectrodeposit

8、ion.ElectrochemicaltestsindicatedthatthechargeI