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1、ABSTRACTABSTRACTWiththeadvanceofinformationtechnologyanddigitalelectronicproducts，therehasbeenallincreasingdemandforelectronicdevicesandbasicmaterialsusedinthem．Uptonow,SIP(systeminpackage)technologyisstillthemaintechnologyinfabricationofmonolithicintegratedcircuits(MIC)technologydueto2Dind
2、uctorsoccupytoolargeareainMICboards．Inordertominiaturizethesize，toreducethepower,toenhancethereliabilityofelectromagneticdevices，andtoincreasethedatatransmissionrate，MICtechnologymustbeconvertedfromSIPtoSOC(systemonchip)．Thekeyfactor,whichaffectsthisconversion，isthesizeofinductors．Theinduct
3、orshouldexhibitlargeenoughinductanceandshouldbesmallenoughtobeintegratedintocircuit．Magneticmaterialsgiverisetoanincreaseofinductancesothatitcaneffectivelyminiaturizethesizeofinductors．Therefore,themagneticinductorsarewidelyemployedinSOCtechnologyInthedissertation,MnZnferritefilmsweredeposi
4、tedbyRFmagnetronsputtering.Wefocusedontheimpactofannealingprocessonthefilmandgotsomeexcellentperformanceparameters.MnZnferritefilmwasdepositedwiththedifferentthickness,thedifferentcomponentsandonthedifferentsubstratesbasedontheoptimizationofprocessparameters.Firstly,theprocessoftheMnZnferri
5、tetargetandfilmswasdescribed,thentheannealingprocessofthefilmwasinvestigatedforthefilmproperties,includingtheannealingpressure,annealingtemperature,annealingheatingrate,annealingoxygencontent,andthecomparisonvacuumannealingwithatmosphericpressureannealing.MnZnferritefilmsweredepositedonthes
6、ubstratewithdifferentthicknessesincluding180nm,320nm,450nm,800nm,1120nmandthephasestructure,microstructure,magneticpropertieswerestudied.Mn0.5Zn0.5Fe2O4ferritefilmsweredepositedonthedifferentsubstratesincludingSi(100),SiO2/Si,MgAl2O4(100),MgAl2O4(111),MgO(100)thepreferredorientationandmagne
7、ticpropertieschangewereanalyzed.MnZnferritefilmsweredepositedunderthedifferentcomponentsofthetargetandthemagneticproperties,phasestructure,frequencycharacteristicswereinvestigated.III万方数据ABSTRACTAccordingtotheresearchresults,thebestannealingconditiontoim
