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1、CZ硅晶生长理论1.CrystalgrowthdesignbyCZmethodThecomponentsoftheCZfurnacecanbedividedinto4parts:(1)furnacebody:includingquartzpot,graphitethreevalvepot,heater,heatinsulationelement,FurnacewalL(2)crystalandcruciblepulledcarriedonrotatingmachineryincludingseedcardhead,hangingstee
2、lPulluptherotatingelements・(3)gaspressurecontrol:includinggasf1owcontrol,vacuumsystem,pressureControlvalve・(4)controlsystem:includingdetectionsensor,computercontro1.Butaccordingtoourargumentcanbeconsideredtoberipe:(1)furnacebody:ineludingthemotorthatcontrolstheliftingand
3、rotationofthecrystalThelimitpositionofcrystallifting),auxiliaryfurnacechamber(steelrope,hammer),Isolationboard,mainfurnacechamber(reverseflowbarrel,bigcoverplate,upperheatpreservationcover,mainprotection)Temperaturecap,heater,threepan,tray,holder,sixangleouterthreadstone
4、Inkscrew,internalthread,graphitescrew,quartzcover,electrode,chassis),Transmissionmachinery(underthechassis)・(1)electriccabinet(heating,vacuum,ballvalve,temperaturecontroller,computer,computer)Fans,vacuumgauges,switches,touchscreens,hydraulicswitches,andallkindsofElectric
5、alapplianee,electroniccomponent)・(2)electriccontrolmachine(downstairs)DensityofmonocrystallinesiliconSoliddensity2.33g/cm3Liquiddensity2.5g/cm3DrivingforceofsolidificationandcrystallizationIntheprocessofsolutiongrowth,asthesolutiontemperaturedrops,Thephasechangeofaliquid
6、stateintoasolid・Whydoesthedropintemperaturecausephasechange?Generation?Wecanusuallyexplainthisproblemfromathermodynamicpointofview.YesTherelativestabilityofdifferentphasescanbedeterminedbytheoccurrenceofisothermalandisobaricphasechangesThefreeenergy(G)isusedtodecide・G二S*
7、IITG:freeenergyH:enthalpyT:absolutetemperatureS:ChaosAnequilibriumsystemwillhavethelowestfreeenergyifasystemisfreeCanGhigherthantheminimumvalue,itwilltrytoreducetheGtoreachtheequilibriumstate・becauseThis,wecanbethedrivingforceofdeltaGascrystallizationAtequilibriummelting
8、temperatureTm,thefreeenergyofliquid-solidisequal,ThedeltaG二0,SowecanthinkthatthedeltaG二DeltaSDeltaTTheT
