clpvapnsr32静电纺丝材料作为肌腱组织工程支架的研究

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1、摘要AbstractAspolycaprolactone(PCL)hasgoodbiocompatibility,biodegradability,mechanicalproperties，easyprocessingofdrugs，andthedegradationproductofthematerialinthebodyisn’tharmfulandSOon，ithasbeenwidelyusedinthetissueengineering．However,duetolackofcellaffinitysitesonthe

2、PCLsurfaceandthematerial’Sdegradationislow，themodifyofPCLisnecessarytoapplyinthetendontissueengineering．WehavetransferredthegenesofspiderdraglinesilkproteinintotheprokaryoticexpressionsystemofE．coliandintroducethearginine-glycine-asparticacid(RGD)tripeptidesequences

3、intoitatthesametimetobuiltaengineeredbacterianamedpNSR32／BL21(DE3)．ThenweproducedtheRGD—recombinantspidersilkproteinnamedpNSR32(Mw：108kD)inmassthroughhigh·densityfermentation．DuetotheintroductionofArg-Gly-Asptripeptide(RGD)topNSR32，therecombinantspidersilkcanpromote

4、theadhesionandproliferationofthecells，whichmakeuptheshortcomingsofPCLmaterial．Polyvinylalcohol-124(PVA一124)isawater-solublepolymermaterials，withrelativelygoodmechanicalproperties，ithasbeenutilizedasamedicalmaterial．DuetoPVA-124isHydrolyzed，itCanimprovethehydrophilic

5、degradationofPCL．Electrospinningisakindoftechnologyusedtomakenanofiber，whichhasbeenwidelyappliedintextile，medical，military，electronicandenergyfields．Becausethemorphologyofnano·fiberissimilarwithextracellularmatrix(ECM)，electrospinninghasapotentialprospectintissueeng

6、ineering．Thisstudywasbaseonthepreviousstudiesofourlaboratory，wemadethePCL／PVA／pNSR32nanofibermaterialbyelectrospinningtechnology．InordertofindoutthebestproportionofPCLandPVAandthebestofvolumepNSR32whichCanproducethebestnanofibermaterial，thespinmaterialswasobservedby

7、scanningelectronmicroscopy(SEM)．Atthesametimeweoptimizedtheprocessparametersofthespinning．ByIRanalysis，theexsitantconditionofthethreecomponentsofthenano—materialswasstudied．Atlast，wemeasuredtheporosityratesofscaffoldmaterialswithPycnometer．Results：@Underthevoltageof

8、80kV，extrusionrateof5mL／h，acceptdistanceIII福建师范大学姚志攀硕士学位论文20cm，temperature45℃，PCL：PVA=2：1intheformicacidsolventsystem，add5％RGD—pNSR32，diam