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ID:28093512
大小:10.27 MB
页数:72页
时间:2018-12-08
《ft用氮化硅薄膜的制备及其性能分析》由会员上传分享,免费在线阅读,更多相关内容在应用文档-天天文库。
1、优秀毕业论文ABSTRACTHZSINSi,HZSINZaridHSIN3absorbingsPecieshaveeontributedtothe51一HabsorptionPeak.Theresearchindicatesthatthe51一HbonddensityeouldbeobtainedbyealculatingtheintensitiesofGaussstandardnormalcurveswhich15essentialforfittingtheFTIRsPectrumProPerl
2、y.SPectroseoPieelliPsometryandsPectroseoPicreflectometryareimPortantmethodstoresearchthePhysicalandoPtiealProPertiesofsiliconnitridethinfilm.ThemainProeessingParametersarePlasmaPower、ch田旧berPressure、electrodesPaeing、substratetemPerature、gasesflowand50
3、on.Themotiveof而5Paper15toinvestigatetheeffectofProcessingParametersontheProPertiesofsiliconnitrideandthecoveragePerformanceofinsulatorlaye兀andtheeffeetofthefilmthleknessofinierfaeelayerontheconductioncurrentPerformanceofthinfilmtransistor.Keywords:sil
4、ieonnitride:PECVD:insulatorlayer:interfaeelayer;PassivationlayerIV精品参考文献资料优秀毕业论文目录目录第一章引言..................……,......................................................................................……11.1课题研究背景及意义.......................……,..............
5、......................................……11.2氮化硅薄膜的性质及主要应用..................................................................……21,2.1物理性质及应用............................……,.............................................……31.2.2化学性质及应用........……,...........
6、.....................................................……61.3氮化硅薄膜的主要制备方法......................................................................……61.3.1等离子增强型化学气相沉积(PECVD)法.......................................……61.3.1.1等离子增强型化学气相沉积(PECVD)法基本原理.........
7、...……61.3.1.2两种不同激励方式的PECVD设备.....................................……81.3.2甚高频等离子增强化学气相沉积(VHF一PECVD),.........................……91.3.3常压化学气相沉积(APCVD)法..........……,...................................……,二91.3.4低压化学气相沉积(LPCVD)法............................
8、……,..................……101.3.5微波电子回旋共振等离子增强形化学气相沉(MWECR一PECVD)…101.3.6光化学气相沉积(Photo一CVD)法......................................……,......……111.4本论文的主要工作内容及意义................................................................……11第二章a一SITFT的结构、制造工艺和
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