光电子技术实验

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1、偏压2V4V6V8V10V12V光电流12.95.68.511.514.517.7光电流23.77.411.114.918.722.7(W)垢誓2V4V6V8V10V12V光敏电阻伏安特性测试偏压(V)光照度(lx)50100200300400500600700800900电压U7.47.26.96.66.56.46.26.16.16光电流I6.68.711.413.614.916.217.218.118.920光电阻(U/T)1.120.820.600.480.430.390.360.330.320.3光敏电阻

2、光电特性测试(圣)20040060080010005O22+光电流I光照度(lx)光照度（lx）0100200300400500600光生电流（mA）020.140.159.879.896.4119.3t-光牛电流（mA）OOOOOOOOO4208642硅光电池短路电流特性测试光照度（1X）01020304050100200300400500600光生电压（V）00.2660.2890.3030.3140.3210.3450.3680.380.3890.3960.401-♦-光生电压（V）O(A)出tfiH^硅光

3、电池开路电圧特性测试光照度为Olx电阻2002000510075001000015000200002500051000200000电流9&491.857.642.83323.21&514.97.51.9电压10.1180.2730.3480.3640.3720.380.3830.3860.3910.394光照度为lOOlx电阻2002000510075001000015000200002500051000200000电流20.220.220.12019.416.814.3126.31.7电压20.0240.060

4、.1220.170.2190.2750.2970.310.330.3422040608010012054321•••••ooooo(A)££光照度为3001x电阻2002000510075001000015000200002500051000200000电流59.859.35039.230.82217.114.27.21.9电压30.0910.1760.3020.3320.3470.3590.3640.3680.3750.379硅光电池伏安特性电流(mA)R=200光照度(lx)01002003004005006

5、00电流(uA)020.139.959.779.799.5120.3电压(V)00.0220.0430.0650.0810.1090.132R=510光照度(lx)0100200300400500600电流(uA)020.239.95&479.6100.1119.8电压(V)00.030.060.0870.1190.150.179R=1000光照度(lx)0100200300400500600电流(uA)020.24059.779.397.8116.4电压(V)00.040.0790.1090.1580.1930

6、.232R=5100光照度(lx)0100200300400500600电流(uA)02038.75055.257.659.6电压(V)00.1210.2340.3030.3340.3490.36R=1OOOO光照度(lx)0100200300400500600电流(uA)019.328.130.832.233.133.7电压(V)00.2180.3170.3470.3640.3730.381偏压(V)050100120130140150160170180光电流(uA)00.010.65.327770011001

7、52019002320硅光电池光照与负载特性曲线+R二510-•-R=200R=1000二5100+E0000008光照度(1X)ooooooooo4208642006002+光电流(uA)500052ooooo5211(vn)005APD光屯二极管伏安特性偏压(V)偏压(V)050100120130140150160170180光生电流1(uA)000.010.212106701110154019502370光生电流2(uA)000.010.3130530950135018002280光生电流3(uA)000.

8、21.82807101140156019602400APD光电二极管雪崩电压测试05050532211Qn)煤£却汶光照度0100300500700900光生电流0300310310310320APD光电二极管光照特性t-光生电流oooooO505050/^0/^1111(vn)2004006008001000光照度(lx)NTC热敏温度特性测试t(°C)20253035