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1、KristinAckerson,VirginiaTechEESpring2002AnalogElectronicsTutorialSeriesDIODESTableofContentsKristinAckerson,VirginiaTechEESpring2002Whatarediodesmadeoutof?____________________slide3N-typematerial_________________________________slide4P-typematerial________________________

2、_________slide5Thepnjunction_________________________________slides6-7Thebiasedpnjunction___________________________slides8-9Propertiesofdiodes_____________________________slides10-11DiodeCircuitModels____________________________slides12-16TheQPoint_______________________

3、_____________slides17-18DynamicResistance_____________________________slides19-20Typesofdiodesandtheiruses___________________slides21-24Sources_______________________________________slide25WhatAreDiodesMadeOutOf?KristinAckerson,VirginiaTechEESpring2002Silicon(Si)andGerman

4、ium(Ge)arethetwomostcommonsingleelementsthatareusedtomakeDiodes.AcompoundthatiscommonlyusedisGalliumArsenide(GaAs),especiallyinthecaseofLEDsbecauseofit’slargebandgap.SiliconandGermaniumarebothgroup4elements,meaningtheyhave4valenceelectrons.Theirstructureallowsthemtogrowin

5、ashapecalledthediamondlattice.Galliumisagroup3elementwhileArsenideisagroup5element.Whenputtogetherasacompound,GaAscreatesazincblendlatticestructure.Inboththediamondlatticeandzincblendlattice,eachatomsharesitsvalenceelectronswithitsfourclosestneighbors.Thissharingofelectro

6、nsiswhatultimatelyallowsdiodestobebuild.Whendopantsfromgroups3or5(inmostcases)areaddedtoSi,GeorGaAsitchangesthepropertiesofthematerialsoweareabletomaketheP-andN-typematerialsthatbecomethediode.Si+4Si+4Si+4Si+4Si+4Si+4Si+4Si+4Si+4Thediagramaboveshowsthe2DstructureoftheSicr

7、ystal.Thelightgreenlinesrepresenttheelectronicbondsmadewhenthevalenceelectronsareshared.EachSiatomsharesoneelectronwitheachofitsfourclosestneighborssothatitsvalencebandwillhaveafull8electrons.N-TypeMaterialKristinAckerson,VirginiaTechEESpring2002N-TypeMaterial:Whenextrava

8、lenceelectronsareintroducedintoamaterialsuchassiliconann-typematerialisproduced.Theextravalencee