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ID:27287984
大小:3.83 MB
页数:73页
时间:2018-12-02
《高功率密度dc-dc电源模块的设计与实现》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、上海交通大学工程硕士学位论文摘要的验证和测试数据,测试结果表明本次设计能够在1/16砖DC-DC电源模块的外形规范下实现约141W/inch3的高功率密度,其它各项关键电气性能也达到了预期的设计要求。最后,本文的第五章对高功率密度DC-DC电源模块的未来研究和发展方向进行了简要的探讨。关键词:功率密度,电源模块,直流-直流,1/16砖,半桥拓扑,LM5035A第II页上海交通大学工程硕士学位论文ABSTRACTDESIGNANDIMPLEMENTATIONOFAHIGHPOWERDENSITYDC-DCPOWERMODULEABSTRACTWiththedev
2、elopmentofcommunicationtechnologyandprogressofintegratechip,thecommunicationindustryhasmorehugedemandonDC-DCpowersupply,anditalsoraiseshigherrequirementstoDC-DCpowermodule.Thecommunicationcompaniesneedpowermodulecannotonlyprovidemorepower,butwithlimitedvolumeassmalleraspossible.This
3、isachallengetopowersupplydesignengineer.Inordertomeetthisrequirement,designershavetodevelopaDC-DCpowermodulewithhigherpowerdensityThispaperprovidesdetaileddescriptionsonsuchahighpowerdensityDC-DCpowermodule.ItmeetsthedefinitionofDOSA1/16thbrickinpowerindustry,andcanoutput3.3V/20A.It
4、spowerdensityreaches141W/inch3.Inthispaper,thefirstchaptergivesabriefintroductionofthe第I页上海交通大学工程硕士学位论文ABSTRACTthesisbackground.AndthesecondchapterdescribesadetailedprocessonhowtodefinetheschemeofthisDC-DCpowermodule.Inthethirdchapter,thedesignandimplementationondifferentsub-modules
5、areintroducedindetails.Verificationandtestresultsareprovidedinfourthchapter.Asverifiedinfourthchapter,thisdesignhasachieveda141W/inch3powerdensity,whichcanrepresenttheadvancedpowerdensityin1/16DC-DCpowermoduleinindustry.Inthefinalchapter,thispapersummarizesthisdesign,andforecaststhe
6、developmentofhighpowerdensityDC-DCpowermoduleinthefuture.KEYWORDS:PowerDensity,PowerModule,DC-DC,1/16thBrick,Half-BridgeTopology,LM5035A第II页上海交通大学工程硕士学位论文缩略语表《缩略语表》缩略语英文原文中文解释1/16thBrickSixteenthPowerSupplyBrick1/16砖电源模块 B-HHysteresisLoopofMagneticMaterial磁性材料的磁滞回线 BmaxMaximumMagnet
7、icFluxDensity最大磁通密度 DC-DCDirectCurrenttoDirectCurrent直流到直流转换 DOSADistributed-PowerOpenStandard分布式电源开放标准 Alliance联盟FullBridgeFullBridgeTopology全桥拓扑结构 HalfBridgeHalfBridgeTopology半桥拓扑结构 IinInputCurrent输入电流 IoutOutputCurrent输出电流 MosfetMetallicOxideSemiconductorField金属氧化物半导体场 EffectTran
8、sistor效应晶体管OCPOverC
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