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1、TIDRV8305－Q1汽车三相BLDC栅极驱动方案时间：2016-06-2913:36:57 作者：TI 来源：中电网TI公司的DRV8305-Q1是三相马达驱动用的栅极驱动器,提供三个半桥驱动器,每个能驱动高边和低边N沟MOSFET;电荷泵驱动器支持100%占空比.器件满足AEC-Q100标准,4.4-V到45-V工作电压,栅极峰值电流1.25A和1A,工作温度–40℃到150℃,主要用在三相BLDC和PMSM马达,汽车油泵和水泵,风扇和鼓风电动机.本文介绍了DRV8305-Q1主要特性,功能框图,典型应用电路图以及DRV8
2、305-Q1EVM汽车三相马达栅极驱动评估模块主要特性,框图,电路图和材料清单.TheDRV8305-Q1deviceisagatedriverICforthree-phasemotor-driveapplications.Thedeviceprovidesthreehigh-accuracyhalf-bridgedrivers,eachcapableofdrivingahigh-sideandlow-sideN-channelMOSFET.Achargepumpdriversupports100%dutycycleandlow-voltageop
3、erationforcoldcranksituations.Thedevicecantolerateloaddumpvoltagesupto45-V.TheDRV8305-Q1deviceincludesthreebidirectionalcurrent-shuntamplifiersforaccuratelow-sidecurrentmeasurementsthatsupportvariablegainsettingsandanadjustableoffsetreference.TheDRV8305-Q1devicehasanintegrated
4、voltageregulatortosupportanMCUorothersystempowerrequirements.ThevoltageregulatorcanbeinterfaceddirectlywithaLINphysicalinterfacetoallowlow-systemstandbyandsleepcurrents.Thegatedriverusesautomatichandshakingwhenswitchingtopreventcurrentshootthrough.TheVDS ofboththehigh-sideandl
5、ow-sideMOSFETsisaccuratelysensedtoprotecttheexternalMOSFETsfromovercurrentconditions.TheSPIprovidesdetailedfaultreporting,diagnostics,anddeviceconfigurationssuchasgainoptionsforthecurrentshuntamplifier,individualMOSFETovercurrentdetection,andgate-driveslew-ratecontrol.DeviceOp
6、tions:DRV8305NQ:Grade1withvoltagereferenceDRV83053Q:Grade1with3.3-V,50-mALDODRV83055Q:Grade1with5-V,50-mALDODRV8305NE:Grade0withvoltagereferenceDRV8305-Q1主要特性:AEC-Q100QualifiedforAutomotiveApplicationsAmbientOperatingTemperatureRanges: TemperatureGrade0(E):–40℃to150℃Temperatur
7、eGrade1(Q):–40℃to125℃4.4-Vto45-VOperatingVoltage1.25-Aand1-APeakGateDriveCurrentsSmartGateDriveArchitecture(IDRIVE&TDRIVE)ProgrammableHigh-andLow-SideSlew-RateControlCharge-PumpGateDriverfor100%DutyCycleThreeIntegratedCurrent-ShuntAmplifiersIntegrated50-mALDO(3.3-Vand5-VOption
8、)3-PWMor6-PWMInputControlupto200kHzSinglePWM-ModeCommutationC
