液态sn-4cu过共晶无铅钎料抗氧化性能的分析

液态sn-4cu过共晶无铅钎料抗氧化性能的分析

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时间:2018-11-08

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1、重庆理工大学硕士学位论文II万方数据AbstractAbstractWiththerapiddevelopmentoftheelectronicinformationindustriesintheworld,electronicpackagingmaterialshaschangedfromleadsoldertolead-freesolder.While,theincreasingamountoftinelementinthelead-freesolderandthehighertemperatureinbrazingsolderleadtoth

2、eaggravationofthesolderoxidationproblem.Toomanyoxideslagwillnotonlywastethesolder,increasethecostofproduction,butalsoaffectthebrazingqualityofelectronicproducts.Therefore,howtocontroltheformationofoxideslagintheproductionandapplicationofsolderproductshasbeenaveryimportantresea

3、rchsubjectonlead-freesolderfieldtodomesticandoverseasscholars.ThispaperchoosestheSn-4Culead-freesolderwhichhasbeenwidelyusedinmanufactureself-fluxingenameledwireasamainresearchsubject.Inthispaper,themainpurposeistoimprovetheanti-oxidationperformanceofSn-4Culead-freesolderonthe

4、basisofvariousinvestigationsinthemeltingcharacteristic,micro-structureandcomposition,technologicalperformanceandinterfacemicrostructureofSn-4Culead-freesolder.BasedonstudyingtheeffectsofPandGaonoxidationresistanceandwettabilityofSn-4Culead-freesolder,weoptimizedSn-4Cu-0.01P-0.

5、03Gasolderwithabettercomprehensiveperformance..TheresultsinthispapershowthatthesmalleramountofPobviouslyimprovestheanti-oxidationperformanceofSn-4Culead-freesolder,theoxidateslagSn-4Cu-0.01Pproducedinstaticskimmingexperimentisonly63.8%ofSn-4Cuwhenthetemperatureis380℃.,butithas

6、alittleinfluenceonthewettingperformance.ThebestamountofGaintheSn-4Culead-freesolderis0.03wt%,theoxidateslagformationofGa-addedsolderalloydecreasesby52.8%.Meanwhile,Gaisadditiveelementonincreasingwettability.Theanti-oxidationperformanceofSn4Cu-0.01P-0.03GaisbetterthanSn-4Cu-0.0

7、1PandSn-4Cu-0.03Ga,buttherateofextensibilityhasnoobviouschangeforthesolderoncopper.BymeansoftheX-rayanalysisontheoxidateslag,theresultsshowthatSnOisthemajoroxidesofSn-4Culead-freesolder.Withoxyphilicskineffect,traceanti-oxidationP、Gaelementsenrichedinthesurfaceofmoltenlead-fre

8、esolder.Accordingtothermodynamiccalculations,theenrichedP、Gae

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