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1、ABSTRACT0.4eVholeinjectingbarrierisformedbetweentheHOMOenergylevelsofIr(ppy)3andthoseoftwohosts,respectively.Therefore,Ir(ppy)3actsasholetrap,andslowsdowntheholetransportation,andbalancesthecarriersinjection,whichcouldrestricttheexcitonformationinemittinglayers.andthestructurewasITO/TAPC(20nm)/TAPC:
2、FIrpic(30nm,6%)/Ir(ppy)3(1nm)/TCTA:FIrpic(30nm,6%)/Bphen(50nm)/Mg:Ag(60nm).2Thedevicehasthemaxbrightnessof20323cd/m,maxcurrentefficiencyof13.18cd/A,andmaxpowerefficiencyof4.18lm/W.Comparedwithdoubleemittinglayerstructuredevices,thisdevicehasa31%increaseonluminance,a100%increaseonthecurrentefficiency
3、,anda100%increaseonpowerefficiency.(4)Basedontwoemittinglayersstructure,orangephosphorescentmaterialIr(2-phq)2(acac)isdopedinTCTA,thenwhitephosphorescentdevicecouldobtained,anddopingradiooforangephosphorescentmaterialisoptimized.TheOLEDstructureisITO/TAPC(20nm)/TAPC:FIrpic(30nm,6%)/Ir(ppy)3(0.5nm)/T
4、CTA:Ir(2-phq)2(acac)(30nm,x%)/Bphen(50nm)/Mg:Ag(60nm).Whenxis5%,thedevicehasthemax2brightnessof6995cd/m,maxcurrentefficiencyof4.76cd/A,andmaxpowerefficiencyof1.86lm/W,thecolorcoordinatesofthedeviceat8Vis(0.34,0.39).Insummary,theresearchbeganfromthebasicOLEDstructure,then,furtherstudyofintroducingdou
5、bleemittinglayersandIr(ppy)3ultrathinlayerwasusedtolimitthetripletsoffsetwiththeaimofobtainingbetterbluephosphorescentdevices.ThisworkhascertainreferencevalueinsolvingtheproblemofbluephosphorescentOLED.Finally,byaddingorangephosphorescentmaterial,whiteOLEDdevicewhichcolorcoordinatesclosetowhitecolor
6、coordinates(0.33,0.33)wereobtained.Keywords:Organiclight-emittingdiode(OLED),bluephosphorescent,doubleemittinglayers,ultrathinjoinlayerIV万方数据目录目录第一章绪论....................................................................................................................11.1OLED研究背景......................
7、.................................................................................11.2OLED的研究现状及发展前景...............................................................................11.3OLED主要应用..........