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1、一种高性能BiCMOS带隙基准电压源设计(国外英文资料)Inthispaper,bybulletzzycontributionPDFdocumentsmayhaveapoorbrowsingexperienceattheWAPend.ItisrecommendedthatyouchooseTXT,ordownloadthesourcefiletothenativeview.66?MetertechniqueThirdperiodof2009Ahigh-performanceBICMOSbandgapreferencevoltagesourcedesignWan
2、gsurprisingly,HangGuiweeks(1.Shanghaiuniversityschoolofmechanicalandelectricalengineeringandautomation,Shanghai200072;2.Microelectronicsresearchanddevelopmentcenter,ShanghaiuniversityShanghai200072)Abstract:thearticleonthebandgapbenchmarkanalysisonthebasicprincipleandcircuitstructur
3、e,thepaperintroducesahighprecision,lowpowerconsumption,highpowersupplyrejectionratioBiCMOSbandgapreferenceelectricmu5vvoltagesourcecircuit.Theimplementationofthiscircuitisbasedonthe0.6-m,b-icmosprocess.Simulationresultsshowthatthereferencecircuitstableworkingvoltagerangeof1.6~9v,4v,
4、underthelowfrequencypowersupplyrejectionratiocanreachto88db,thetemperaturerangefrom150℃to25℃,thetemperaturecoefficientis9.73x-6,theoutputvoltageerroris1.72mv.Tothetime10keywords:band-gapbenchmarks;BiCMOS;PowersupplyrejectionratioChineselibraryclassificationnumber:TN432literatureiden
5、tificationcode:Barticlenumber:1006-2394(2009)03-0066-031,2,1DesignofaBiCMOSBandgapReferenceVoltageSourcewithHighPerformance(1.CollegeofMechatronicandAutomation,ShanghaiUniv,Shanghai200072,China;2.micro2electronicR&DCenter,ShanghaiUniv,Shanghai200072,China).Abstract:Basedontheanalysi
6、sofbasistheoryandstructureofbandgapreferencecircuit,apreciseBiCMOSbandgapvoltagereferencewithlowpowerwasteandhighpowersupplyrejectionratio(PSRR)isprochargeinthispaper.ThecircuitisrealizedwithThesiresultsshowthatThecircuitcanworkwithThe.m9vsourcevoltagerangedfrom1to6.AndhasagoodPSRRo
7、f4v-88dbatlowfrequency,Thetemperaturecoefficient)islow,to9.73partspermillion(PPM)andTheoutputvoltagevariationis1.72mvoverThetemperaturerangefrom25℃to150℃.Keywords:bandgapreference;BiCMOS;PSRRPrincipleandcircuitstructureBasicprinciplesandcircuitstructuresBipolartransistorbase-emitter
8、voltage(VB)Ehasaneg
