单晶蓝宝石基片集群磁流变抛光实验研究

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1、密级公开分类号TG7工程硕士学位论文单晶蓝宝石基片集群磁流变抛光实验研究陈刚指导教师肖强教授靳龙平高级工程师申请学位级别工程硕士工程领域机械工程2018年5月1日0.8nm。4）分析了亚表面损伤的形成机理，理论分析了集群磁流变抛光去除亚表面损伤的可行性，基于印压断裂理论，建立了亚表面损伤深度与抛光参数的关系模型，通过正交实验验证了模型的合理性以及研究了抛光参数对亚表面损伤深度的影响规律，实验结果表明，亚表面损伤深度随着抛光压力和磨粒粒径的增大而增大，抛光压力是决定是否产生亚表面损伤的关键因素，当磨粒粒径为280

2、nm，抛光压力为82N时，抛光过程中不产生亚表面损伤，并且能够去除研磨中造成的亚表面损伤，经过100min抛光亚表面损伤深度减小至0.9nm。关键词：单晶蓝宝石；集群磁流变抛光；材料去除量；表面粗糙度；亚表面损伤深度theproblemsexistingintheexperiment.Thelappingfluidformulationsandthepolishingfluidformulationswereimproved.Theclustermagnetorheologicalpolishingproces

3、swascarriedoutbyusingself-madesilicondioxidecolloidalsolwithaparticlesizeof70nm.Theeffectsoftheconcentrationofthepolishingfluid,thepHofthepolishingfluidandthetemperatureofthepolishingfluidonthesurfaceroughnesswerestudied.Theexperimentalresultsshowthattherate

4、ofdecreaseofsurfaceroughnessdecreaseswiththedecreaseofabrasiveconcentration,increasesfirstandthendecreaseswiththeincreaseofthepolishingfluidtemperatureandpH.Whentheconcentrationofthepolishingfluidis45%,pH=11,temperatureat36℃,therateofdecreaseofsurfaceroughne

5、ssis1.65nm/minandthesurfaceroughnessis0.8nm.4)Theformationmechanismofsubsurfacedamagewasanalyzed.Thefeasibilityofclustermagnetorheologicalpolishingtoremovesubsurfacedamagewastheoreticallyanalyzed.Basedonthetheoryofimprintfracture,therelationshipmodelbetweens

6、ubsurfacedamagedepthandpolishingparameterswasestablished.Therationalityofthemodelwasverifiedbyorthogonalexperimentsandtheeffectsofpolishingparametersonthedepthofsubsurfacedamagewasstudied.Theexperimentalresultsshowthatthesubsurfacedamagedepthincreaseswiththe

7、increaseofpolishingpressureandparticlesize.polishingpressureisakeyfactorindeterminingwhethersubsurfacedamageisoccurring,whentheparticlesizeis280nmandthepolishingpressureis82N,nosubsurfacedamageoccursduringpolishingandthesubsurfacedamagecausedbygrindingcanber

8、emoved.After100minutespolishing,thesubsurfacedamagedepthisreducedto0.9nm.KeyWords:singlecrystalsapphire;clustermagnetorheologicalpolishing;materialremovalamount;surfaceroughness;subsurfacedamage