semiconductor manufacturing technology - texas a&m university半导体制造技术-德克萨斯&amp；m大学

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1、SemiconductorManufacturingTechnologyMichaelQuirk&JulianSerda©October2001byPrenticeHallChapter17DopingProcessesObjectivesAfterstudyingthematerialinthischapter,youwillbeableto:1.Explainthepurposeandapplicationsfordopinginwaferfabrication.2.Discusstheprincip

2、lesandprocessofdopantdiffusion.3.Provideanoverviewofionimplantation,includingitsadvantagesanddisadvantages.4.Discusstheimportanceofdoseandrangeinionimplant.5.Listanddescribethefivemajorsubsystemsforanionimplanter.6.Explainannealingandchannelinginionimplan

3、tation.7.Describedifferentapplicationsofionimplantation.CommonDopantsUsedinSemiconductorManufacturingTable17.1CMOSStructurewithDopedRegionsn-channelTransistorp-channelTransistorLIoxidep–epitaxiallayerp+siliconsubstrateSTISTISTIn+p+p-welln-wellp+p–p+p–p+n

4、+n–n+n–n+ABCEFDGHKLIJMNOn+nn++p+pp++Figure17.1CommonDopantProcessesinCMOSFabricationTable17.2IonImplantinProcessFlowUsedwithpermissionfromLanceKinney,AMDImplantDiffusionTest/SortEtchPolishPhotoCompletedwaferUnpatternedwaferWaferstartThinFilmsWaferfabricat

5、ion(front-end)Hardmask(oxideornitride)AnnealafterimplantPhotoresistmaskFigure17.2DopedRegioninaSiliconWaferOxideOxidep+SiliconsubstrateDopantgasNDiffusedregionFigure17.3DiffusionDiffusionPrinciplesThreeStepsPredepositionDrive-inActivationDopantMovementSol

6、idSolubilityLateralDiffusionDiffusionProcessWaferCleaningDopantSourcesDopantDiffusioninSiliconDisplacedsiliconatomininterstitialsiteSiSiSiSiSiSiSiSiSic)MechanicalinterstitialdisplacementSiSiSiSiSiSiSiSiSia)Siliconlatticestructureb)SubstitutionaldiffusionS

7、iSiSiSiSiSiSiSiVacancyDopantd)InterstitialdiffusionSiSiSiSiSiSiSiSiSiDopantininterstitialsiteFigure17.4SolidSolubilityLimitsinSiliconat1100°CTable17.3DiffusionProcessEightStepsforSuccessfulDiffusion:1.Runqualificationtesttoensurethetoolmeetsproductionqual

8、itycriteria.2.Verifywaferpropertieswithalotcontrolsystem.3.Downloadtheprocessrecipewiththedesireddiffusionparameters.4.Setupthefurnace,includingatemperatureprofile.5.CleanthewafersanddipinHFtoremovenativeoxide.6.Per