deep submicron cmos circuit design simulator in hands

deep submicron cmos circuit design simulator in hands

ID:17575618

大小:14.39 MB

页数:723页

时间:2018-09-03

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1、DEEPSUBMICRONCMOSDESIGNContentsDeep-submicronCMOScircuitdesignSimulatorinhandsEtienneSicardSoniaDelmasBendhiaVersionDecember2003ThisbookisunderconsiderationforpublicationbyBrooks/ColePublishingCompany3450South3650EastStreetSaltLakeCity,Utah84109,USAwww.bro

2、okscole.com(Contact:Bill.Stenquist@wadsworth.com)120/12/03DEEPSUBMICRONCMOSDESIGNContentsAcknowledgementsWewouldlikeourearlycolleaguesJean-FrancoisHabigand,KozoKinoshita,AntonioRubiofortheirsupportthroughoutthedevelopmentoftheMicrowind,Dschtools.Theproject

3、ofwritingabookthatseemedinitiallytobeshadowytookformandsubstance,andledtothispresentwork.WewouldliketothankJoseph-GeorgesFerranteforhavingfaithinourabilitytodriveambitiousmicroelectronicsresearchprojects,andhavingprovidedusacontinuoussupportoverthelastteny

4、ears.ProductivetechnicaldiscussionswithJean-PierreSchoellkopf,AmaurySoubeyran,ThomasSteinecke,GertVolandandJean-LouisNoulletarealsogratefullyacknowledged.SpecialthanksareduetotechnicalcontributorstotheDschandMicrowindsoftware(ChenXi,JianwenHuang),toourcoll

5、eaguesatINSAhowalwayssupportedthiswork,tonumerousprofessors,studentsandengineerswhopatientlydebuggedthetechnicalcontentsofthebookandthesoftware,andgavevaluablecommentsandsuggestions.Also,wewouldliketothankMarie-AgnesDetourbeforhavingcarefullyreviewedtheman

6、uscript.Finallywewouldliketoacknowledgeourbiggestdebttoourparentsandtoourcompanionfortheirconstantsupport.Abouttheauthorsetienne.sicard@insa-tlse.frETIENNESICARDwasborninParis,France,inJune1961.HereceivedaB.Sdegreein1984andaPhDinElectricalEngineeringin1987

7、bothfromtheUniversityofToulouse.HewasgrantedascholarshipfromtheJapaneseMinistryofEducationandstayed18monthsattheUniversityofOsaka,Japan.Previouslyaprofessorofelectronicsinthedepartmentofphysics,attheUniversityofBalearicIslands,Spain,E.Sicardiscurrentlyprof

8、essorattheINSAElectronicEngineeringSchoolofToulouse.Hisresearchinterestsincludeseveralaspectsofintegratedcircuitdesignincludingcrosstalkfaulttolerance,andelectromagneticcompatibilityofintegratedcircuits.Etien

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