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1、------------------------------------------------------------------------------------------------蓝宝石图形衬底上生长GaN的微区拉曼光谱研究_英文_第25卷第1期2010年2月液晶与显示ChineseJournalofLiquidCrystalsandDisplaysVol125,No11Feb.,2010ArticleID:1007-2780(2010)01-0017-04Micro-RamanSpectroscopyCharacterizationofGaNGrownonMasklessPeri
2、odicallyGroovedSapphireFabricatedbyWetChemicalEtchingYUNa-isen1,GUOL-iwei2,PENGMing-zeng2,ZHUXue-liang2,2222WANGJing,JIAHa-iqiang,CHENHong,ZHOUJun-ming(1.InstituteofOptoelectronicTechnology,SchoolofMathematicsandPhysics,DalianNationalitiesUniversity,Dalian116600,China,E-mail:yunaisen@dlnu.edu.cn;2.B
3、eijingNationalLaboratoryforCondensedMatterPhysics,InstituteofPhysics,ChineseAcademyofSciences,Beijing100080,China)Abstract:Micro-RamanspectroscopyisperformedtocharacterizeGaNfilmsgrownonthe——————————————————————————————————————-------------------------------------------------------------------------
4、-----------------------patternedsapphire(0001)fabricatedbywetchemicaletching.Thestressdistributionsarecharacterizedbythefrequencyshiftinthemicro-Ramanspectroscopymeasurements.Residualstressstateandcarrierconcentrationinthemesaandwingregionareassessed.Thewingregionshowslowercompressivestressandlessca
5、rrierconcentrationincomparisonwithmesaregion.ThatisduetotheinteractionsbetweensapphiresandGaNastheresultofdiffe-rencesinthecoefficientsofthermalexpansionareexcludedinthewingregionbyadoptingmasklessperiodicallygroovedsapphire,thuslesscompressivestressandlowerbackgroundcarrierconcentrationcanbeachieve
6、dbythismethod.——————————————————————————————————————------------------------------------------------------------------------------------------------Keywords:GaN;MOCVD;Micro-Ramanspectroscopy蓝宝石图形衬底上生长GaN的微区拉曼光谱研究于乃森1,郭丽伟2,彭铭征2,朱学亮2,王晶2,贾海强2,陈弘2,周均铭2(1.大连民族学院理学院光电子研究所,辽宁大连116600,E-mail:yunaisen@dlnu.
7、edu.cn;2.中国科学院物理研究所凝聚态物理国家实验室,北京100080)摘要:采用微区拉曼光谱对生长在湿法腐蚀获得的无掩膜周期性图形蓝宝石衬底上GaN材料做了研究,结果显示,侧向外延生长区域具有较低的压应力。采用湿法腐蚀结合原子力显微镜对材料的位错进行了表征,侧向外延区域显示了低的位错密度,具有较高的晶体质量。另外通过对不同生长区域的拉曼纵光学声子与等离子体激元形成的耦合模高频支进行拟合,结
