微电子技术 全真模拟试卷（microelectronic technology simulation test）

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1、微电子技术全真模拟试卷（Microelectronictechnologysimulationtest）Thisarticleiscontributedbycaozhe815DOCdocumentsmayexperiencepoorbrowsingontheWAPside.ItisrecommendedthatyoufirstselectTXT,ordownloadthesourcefiletothelocalview.Microelectronictechnologysimulationtest1terms:analogintegratedcircuits,digitali

2、ntegratedcircuits,intrinsicsemiconductors,intrinsiccarriers,equivalentcircuitmodels.Digitalintegratedcircuit:circuitthatperformsoperationsentirelyinbinarylogicfortransmittingandprocessingdigitalsignals.Analogintegratedcircuit:acircuitforacquiring,transmitting,processingandconvertinganalogqu

3、antities.Intrinsicsemiconductor:puresemiconductormaterialwithoutimpuritiesanddefects;puresemiconductorshaveverypoorelectricalconductivity.Intrinsiccarriers:carriers(electronsandholes)inintrinsicsemiconductors.Thatisnotthecarrierproducedbydoping.Thatistosay,theintrinsiccarrieriscomposedofthe

4、rmalexcitationofintrinsicexcitationproduced,whichisthevalenceelectronstotheconductionbandproducedfromthevalenceband;theyareproducedinpairs,sotheconcentrationofelectronsandholesarealwaysequal.Equivalentcircuitmodel:equivalentcircuit-acircuitmodelthatrepresentstheelectricalcharacteristicsofso

5、lidstateelectronicdevices.2therelationbetweenintrinsiccarrierconcentrationandtemperatureofsemiconductormaterialsisgivenbytheformulaNi=pi=AT3/2E.Eg/2KTRulesandmaincharacteristicsofthe3developmentofmicroelectronictechnologydevelopmentlaw:Moore'slaw,namelythedevelopmentofintegratedcircuittechn

6、ology:everythreeyearstoupgradethegenerationandintegrationofeverythreeyearsovertwo,widthofabout30%smaller,thelogiccircuit(representedbyCPU)theworkingfrequencyisincreasedbyabout30%.Mainfeatures:smallersize(minimumgatelengthorwidthMOS)chipsizeincreasing(diesize)thenumberoftransistorsonasinglec

7、hipclockspeedmorefasterandmoreandmorelowvoltagepowersupplywiringlayerofmoreandmoreI/Oleadmoreandmore4briefdescriptionofintegratedcircuitsaredividedintoseveralscaleclass.SSI(SmallScaleIC):<100MSI(MediumScaleIC):100~1000LSI(LargeScaleIC):1000~105VLSI(VeryL