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ID:14418880
大小:77.50 KB
页数:29页
时间:2018-07-28
《2016新编南邮半导体器件物理(双语)》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、acceptordoping受主杂质forbiddenenergyband禁带allowedenergyband允带Halleffect霍尔效应ambipolardiffusioncoefficient双极扩散系数highinjection大注入ambipolarmobility双极迁移率hole空穴ambipolartransport双极输运inputcharacteristiccurve输入特征曲线ambipolartransportequation双极输运方程insulator绝缘体:atomicbond原子键intrin
2、siccarrie本征载流子avalanchebreakdown雪崩击穿intrinsicFermilevel本征费米能级body-centeredcubiclattice体心立方ionimplantation离子注入boundaryconditions边界条件ionicbond离子键boundaryconditions边界条件janedistribution少子分布built-inpotentialbarrier内建电势差/电场junctioncapacitance结电容/势垒电容carrierdrift载流子漂移lattic
3、晶格carriergeneration载流子的产生latticescattering晶格扩散carrierrecombination载流子的复合Lawofconservationofmass质量守恒定律chargeneutrality电中性lawofmassaction质量作用定律compensatedsemiconductor补偿半导体linergradedjunction线性缓变结completeionization完全电离Lowlevelinjection小注入conductivity电导率Maxwell-Boltzman
4、napproximation麦克斯韦-波尔兹曼近似contrasteffect衬偏效应metal金属covalentbond共价键metal-semiconductorcontact金属半导体接触crystal晶体Millerindices密勒指数crystalimpurity晶体杂质minoritycarrierdiffusionlength少子扩散长度crystalorientation晶向mobilityratio迁移率cutofffrequency截止频率Nonequilibriumcarrier非平衡载流子Degene
5、rateandNondegenerateSemiconductors简并与非简并半导体Ohmiccontact欧姆接触densityofstatesfunction状态密度函数one-sidedjunction单边突变结diamondlattice金刚石晶格onizedimpurityscattering电离杂质散射diffuse扩散on-uniformdoping非均匀参杂diffusioncapacitance子扩散电容Pauliexclusionprinciple泡利不相容原理diffusioncapacitance扩散电
6、容photon光子donordoping施主杂质PNjunctiondiodePN结二极管drift漂移quanta量子driftcurrent漂移电流recombinationrate复合driftvelocity漂移速度recombinationrate复合率Einstein’srelation爱因斯坦关系式resistivity电阻率electrondiffusioncoefficient电子扩散系数rystaldefect/imperfection晶体缺陷electrondiffusioncurrent电子扩散电流Sch
7、ottkydiode肖特基二极管electroneffectivemass电子有效质量semiconductor半导体Electronicsourcespeed电子源物速度simplecubic简立方晶格elementalsemiconductor元素半导体substrate衬底epitaxiallayer外延层surfacestates表面态Surfacescattering表面散射equationofcontinuity连续性方程Thesemiconductorinequilibrium平衡半导体excesscarriers
8、过剩载流子Thesemiconductorinequilibrium平衡半导体excesselectrons过剩电子thresholdvoltage阈值电压excessholes过剩空穴transconductance跨导excessminoritycarrie
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