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1、碳化硅电力电子器件研发进展与存在问题ProgressandproblemsinresearchanddevelopmentofSiCPowerElectronicDevicesAuthor:ChenZhimingKeywords:siliconcarbide,powerelectronics,devices1IntroductionWiththehelpoftherapiddevelopmentofmicroelectronicstechnology,powerelectronicsdevicesbasedonsiliconbecauseofthehighpowerfieldeff
2、ecttransistor(powerMOS)andinsulatedgatebipolartransistor(IGBT)comprehensiveapplicationofnewpowerelectronicdevicesandmature.Atpresent,theperfectperformanceofthesedeviceshasswitchwiththestructuraldesignandmanufacturingprocessandclosetothetheoreticallimitbythematerialpropertiesdetermined,relyonsi
3、licondevicescontinuetoimproveandenhancethepowerelectronicdeviceandsystemperformancepotentialisverylimited.So,relyonnewmaterialstomeethigherrequirementsontheperformanceofthedeviceofanewgenerationofpowerelectronicdevicesandsystems,asearlyasattheturnofthecenturybeforetheformationofaconsensusinthe
4、powerelectronicsresearchandtechnology,researchanddevelopmentofsiliconcarbidepowerelectronicdevicesalongwiththeformationofhotspots.Asakindofwidebandgapsemiconductormaterial,siliconcarbidenotonlyhighbreakdownfieldstrengthandgoodthermalstability,butalsohassaturatedelectrondriftvelocityandhighther
5、malconductivity,highfrequencyandhighpowerdevicescanbeusedtomanufactureavarietyofhightemperature,appliedtosilicondevicesarenotsuitableforoccasions,ortoproducesilicondevicesingeneralapplicationstogeneratetheeffect.Theoperatingtemperatureofthedevicecanbeimprovedbyusingwidebandgapmaterials.Theforb
6、iddenbandwidthsof6H-,SiCand4H-SiCareashighas3eVand3.25eV,respectively,andthecorrespondingintrinsictemperaturecanbeashighas800degreesC.Thatis,thenarrowestbandgap3C-SiC,anditsbandgapisabout2.3eV.Asaresult,thehighestoperatingtemperatureofsiliconcarbidedevicesmayexceed600C.Powerswitchdevicesrevers
7、evoltagestressanddriftregion(unipolardevice)orbase(thelengthofbipolardevices)andresistivity,resistivityandconductionlengthandunipolarpowerswitchdevicesanddirectlydependsonthespecificresistanceofthedriftregion,andsoitsmanufacturingmateri
