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1、H20R1202苏泊尔电磁炉常用IGBT管参数导读:就爱阅读网友为您分享以下“H20R1202苏泊尔电磁炉常用IGBT管参数”资讯,希望对您有所帮助,感谢您对92to.com的支持!PowerSemiconductors1Rev.2.1July06ReverseConductingIGBTwithmonolithicbodydiodeFeatures:•PowerfulmonolithicBodyDiodewithverylowforwardvoltage•Bodydiodeclampsnegativ
2、evoltages•TrenchStopandFieldstoptechnologyfor1200Vapplicationsoffers23:-verytightparameterdistribution-highruggedness,temperaturestablebehavior•NPTtechnologyofferseasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVCE(sat)•LowEMI•Qualif
3、iedaccordingtoJEDEC1fortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:Applications:•InductiveCooking•SoftSwitchingApplicationsTypeVCEICVCE(sat),Tj=25°CTj,maxPackage1.65V175°CMaximumRatingsUnitCollector-emitter
4、voltageVCEDCcollectorcurrentTC=25°CTC=100°CIC3015Pulsedcollectorcurrent,tplimitedbyT23jmaxICpuls45Turnoffsafeoperatingarea(VCE≤1200V,Tj≤175°C)-45DiodeforwardcurrentTC=25°CTC=100°CIF2013Diodepulsedcurrent,tplimitedbyTjmaxIFpuls30Diodesurgenonrepetitivecu
5、rrent,tplimitedbyTjmaxTC=25°C,tp=10ms,sinehalfwaveTC=25°C,tp≤2.5µs,sinehalfwaveTC=100°C,tp≤2.5µs,sinehalfwaveIFSM50130120AGate-emittervoltageTransientGate-emittervoltage(tp5ms)VGE±20±25VPowerdissipationTC=25°CPtotOperatingjunctiontemperatureTj-40...+175
6、StoragetemperatureTstg-55...+175Solderingtemperature,1.6mm(0.063in.)fromcasefor10s-260°C1J-STD-020and23JESD-022®PowerSemiconductors2Rev.2.1July06ThermalResistanceValueUnitCharacteristicIGBTthermalresistance,junction–caseRthJCDiodethermalresistance,junct
7、ion–caseRthJCDThermalresistance,junction–ambientRthJAK/WElectricalCharacteristic,atTj=25°C,unlessotherwisespecifiedValueUnitStaticCharacteristicCollector-emitterbreakdownvoltageV(BR)CESVGE=0V,IC=500µACollector-emittersaturationvoltageVCE(sat)VGE=15V,IC=
8、15ATj=25°CTj=125°CTj=175°C---1.652.02.01.85--Diodeforward23voltageVFVGE=0V,IF=7.5ATj=25°CTj=150°CTj=175°C---1.251.31.31.4--Gate-emitterthresholdvoltageVGE(th)IC=0.5mA,VCE=VGEVZerogatevoltagecollectorcurrentICESVCE=1200V,VGE=0VTj=