资源描述：
《碲化镉太阳能电池资料（cadmium telluride solar cell data）》由会员上传分享，免费在线阅读，更多相关内容在教育资源-天天文库。
1、碲化镉太阳能电池资料（Cadmiumtelluridesolarcelldata）CdTesolarcell.Txt10withperseverance,thelonelyjourneyoflifecanbecastintoapieceofbluesky;withperseverance,lonelinesscanbecomearowofHongyan;withperseverance,joycanblossomintoManyuanflowers.Thisarticleiscontributedbyxiehaibing1DOCdocumentsmayexperienc
2、epoorbrowsingontheWAPside.ItisrecommendedthatyoufirstselectTXT,ordownloadthesourcefiletothelocalview.GaAssolarcellversionofhistoryinordertofindthesiliconsolarcellsubstitutes,peopleinadditiontothedevelopmentofpolycrystallinesilicon,amorphoussiliconthinfilmsolarcell,andsolarcelldevelopment
3、.OthermaterialsincludinggalliumarsenideIII-Vcompounds,cadmiumsulfide,cadmiumsulfideandcopperindiumselenidethinbattery.Thebattery,althoughCDsandtheefficiencyofCdTethinfilmsolarcellsthaninnonefficiencyofamorphoussiliconthinfilmsolarcellishigh,thecostislowandeasytomonocrystallinecells,large
4、-scaleproduction,butduetocadmiumtoxic,willcauseseriouspollutiontotheenvironment,therefore,isnotasubstituteforcrystallinesiliconsolarcellisthemostidealGaAsIII-Vcompoundsandcopper.Indiumselenidethinfilmbatterywithhighefficiencywidespreadattention.GaAsbelongstoIII-Vcompoundsemiconductormate
5、rials,theenergygapis1.4eVGoodforhighabsorptionofsunlight,suitableformatchingwiththesolarspectrum,andhightemperature,atthetemperatureof250DEGC,photoelectricconversionperformanceisstillverygood,thehighestphotoelectricconversionefficiencyisabout30%,especiallysuitableforhightemperatureGaAsco
6、ncentratorsolarcells.SiliconwaferproductionmodeandthetraditionalmodeofproductionofthebigthesameneedmadeepitaxyofGaAs,theepitaxialwaferdiameterisusually4-6inches,muchsmallerthanthe12inchsiliconwafertowafer.Leineedspecialmachineatthesametime,thehighcostofrawmaterialsofSiGaAs,resultinginGaA
7、sfinishedICcostisrelativelyhigh.Therearetwokindsofcurrentepitaxyisachemical,MOCVD,aphysicalMBE.GaAsIII-VcompoundthinfilmsolarcellswerepreparedbyMOVPEandLPEtechnology,theMOVPEpreparationmethodofGaAsthinfilmsolarcellsubstrateunderantidislocation.Shouldthepressure,III-Vratio
