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1、------------------------------------------------------------------------------------------------反应溅射的TaN金属栅的材料性质和有效功函数研究Vol.32,No.5JournalofSemiconductorsMay2011MaterialpropertiesandeffectiveworkfunctionofreactivesputteredTaNgateelectrodes??ZhangManhong(张满红)??,HuoZongliang(霍宗亮),WangQin(王琴),andLiuMi
2、ng(刘明)LaboratoryofNanofabricationandNovelDeviceIntegration,InstituteofMicroelectronics,ChineseAcademyofSciences,Beijing100029,ChinaAbstract:Theresistivity,crystallinestructureandeffectiveworkfunction(EWF)ofreactivesputteredTaNhasbeeninvestigated.As-depositedTaNfilmshaveanfccstructure.Afterpost-meta
3、lannealing(PMA)at900?C,theTaNfilmsdepositedwithaN2flowrategreaterthan6.5sccmkeeptheirfccstructure,whilethefilmsdepositedwithaN2flowratelowerthan6.25sccmexhibitamicrostructurechange.TheflatbandvoltagesofgatestackswithTaNfilmsasgateelectrodesonSiO2andHfO2arealsomeasured.Itisconcludedthatadipoleisform
4、edatthedielectric-TaNinterfaceanditscontributiontotheEWFofTaNchangeswiththeTa/NratioinTaN,theunderneathdielectriclayerandthePMAconditions.——————————————————————————————————————------------------------------------------------------------------------------------------------Keywords:metalgate;thermals
5、tability;effectiveworkfunction;dipoleDOI:10.1088/1674-4926/32/5/053005EEACC:25201.IntroductionAscomplementarymetal–oxide–semiconductor(CMOS)——————————————————————————————————————------------------------------------------------------------------------------------------------devicescontinuetoscaledow
6、ninsize,ultrathingatedielectricswithanequivalentoxidethickness(EOT)ofaround10?Aareneeded.Atthisgatethickness,SiO2istooleakytobeem-ployedinlowpowerapplications?1??.Sohigh-kmaterialssuchasHfO2,ZrO2,theirsilicatesandnitrideshavebeenconsid-eredtoreplaceSiO2withtheadvantagesofathinEOT,duetohighdielectri
7、cconstants,andsmallleakagecurrent,duetotheadoptionofalargephysicalthickness?2??4??.Thecon-ventionalpoly-Sigateelectrodehaslimitations:poly-Side-pletioneffects,dopantpenetrationeffectsandincompatibil-itywith
