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1、Litho黄光制程简介Litho目录•半导体制程简介•黄光制程简介•涂胶系统•曝光系统•显影系统•检测系统•总结黄光制程Litho半导体制程简介生长薄膜抛光清洗(Thinfilm)(CMP)(Clean)清洗蚀刻黄光(Clean)(Etch)(Photo)扩散清洗离子注入(Diffusion)(Clean)(Implant)Litho什么是黄光区?Litho-CleanRoom-SeparationOtherAreaLithographyArea†CleanNH3†WaveLengthMateriaControllAdditionalSelectioPreFilternClean
2、ingTRACKImprovedSystemADchamber“Class100”within100(0.5umUP)/f3(0.028m3)LithoPhotoin-lineprocessflowoverview[1]GeneralFlowDefinition:It’spatternprintingprocessontheresistcoatedwaferPhotolithographybyUVexposureandpatterndesignedmask(Reticle).FilmDepositionResistCoatUVExposure DevelopingEtchhvRe
3、ticleGasPhotoresistPhotoresistFilmFilmFilmFilmWaferWaferWaferWaferWaferJOBPatternSizeControlEE/FOPatternProfileControlFACTOROLBaseLine/FBPhotoAlignControlbetweenlayerMix&Match(System)•Processconditiondependsonwhichlayer:Substratecondition,CD,Topology,OLtarget,Etchtargetetc•Keyprocessfactor:Tp
4、r(A),UseBARCornot,SB,TARCornot,WEE,EE,FO,OLoffset,PEB,Dev.Dippingtimeandsoon.•Keymachinefactor:Cupexhaustpressure,Waterjacketcontroltemp,Chamberpressure,Temp,focus,Plateexhaust,PEBtempAccuracy.LithoPhotoin-lineprocessflowoverviewBAKEBARCBAKE(*)TARC(***)HMDScoatCooling1PRCoat(**)SoftBakeCoolin
5、g2Deposition2-24HHP2-14HHP3-243-14LHP2-23HHP2-13HHP3-23CHP3-13LHPWEEWEE($)1-32-22LHP2-12LHP3-22CHP3-12LHPCSTstage2-21CPL2-11CPL3-21CHP3-11CPL4-42-202-10CWH3-203-101-02-19CPL2-29LHP2-9CPL3-19CHP3-9CPL2-82-28LHP2-18SHU3-184-04-51-22-7ADH2-27LHP2-17SHU3-27LHP3-17CPLCSTstage2-6TRS2-26LHP2-163-26L
6、HP3-16TRSPRstrip2-5TCP2-25LHP2-15ADH3-25LHP3-15CPLCSTstage2-03-04-3(Buff)EGAalign 1-12-3ARC2-4ARC3-33-44-2(Buff)stepper2-1PR2-2PR3-13-24-1(Buff)IonImpEtchReworkIN-LINEExposureTRACKEXPOSUREScope($$$)OLmeasureHardBakeDevelopingCoolingP.E.B($$)CDmeasure(*)Absolutelyweremovemoistureonthewaferbefo
7、reBARCcoating:Secondaryreaction(**)EBRisnotabsoluteprocess:WecanuseWEEinsteadofEBR==>Needrecipetuning(***)TARCshouldbecoatedafterPRbake(Softbake):DonotTARCbake(Secondaryreaction)($)WecanchangefrombeforeexposuretoafterexposureforI-line,butDUVc
