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1、15thInternationalPowerElectronicsandMotionControlConference,EPE-PEMC2012ECCEEurope,NoviSad,SerbiaApplicationofanew600VGaNTransistorinPowerElectronicsforPVsystems123AndreasHensel,ChristianWilhelm,DirkKranzer1FraunhoferInstituteforSolarEnergySystems,Freiburg,Germa
2、ny,Andreas.Hensel@ise.fraunhofer.de2FraunhoferInstituteforSolarEnergySystems,Freiburg,Germany,Christian.Wilhelm@ise.fraunhofer.de3FraunhoferInstituteforSolarEnergySystems,Freiburg,Germany,Dirk.Kranzer@ise.fraunhofer.deAbstract—Thebenefitsofusinggalliumnitride(Ga
3、N)circuitisintroduced.TheapplicationoftheGITisbasedtransistorsinpowerelectronicconvertersaredemonstratedbytheexampleofPVpowerelectronics.demonstratedinthispaper.ThekeycharacteristicsofanewTheobtainedefficiencyiscomparedtotheresultswithrecentlyavailablenormally-o
4、ffGaNGateInjectioncommonSidevices.AsfreewheelingdiodesSchottkyTransistor(GIT)withablockingvoltageof600Vandanominaldraincurrentof15Aarereviewedandanalysed.diodesbasedonSiCandGaNareusedandcompared.AnoptimiseddrivingcircuitforlowconductionandII.KEYCHARACTERISTICSOF
5、THEGANGITswitchinglossesisshown.ThelowswitchinglossesoftheGaNGITleadtohighefficientconverterswithhigherTheGaNGITisavailablewithablockingvoltageofswitchingfrequencies.ThisisdemonstratedbytheapplicationoftheGaNGITinpowerelectronicconverters600V.Thepermittedjunctio
6、ntemperatureis150°C.forphotovoltaic(PV)systems(DC/DC-ConverterforMPPFigure1showstheleakagecurrentofdifferentdiscretetracking).TheobtainedefficiencyiscomparedtotheresultsGaNGITsat25°C(#A-#L)andofonetransistor(#J)atwithcommonSidevices.AsfreewheelingdiodesSchottky2
7、5°C,125°Cand150°C.diodesbasedonSiCandGaNareusedandcompared.Keywords—GaNTransistor,DC/DCConverter,Photovoltaic.TABLEI1ELECTRICALSPECIFICATIONOFGANGITI.INTRODUCTIONParameterValueBlockingVoltage600VAsshownin[1-4]theapplicationofsiliconcarbideContinuousDrainCurrent1
8、5A(SiC)basedtransistorsinpowerelectronicsleadstoOn-stateResistance58mΩreducedsizeandweightofconvertersandatthesameMaxOperationTemperature150°Ctimetohigherefficiency.T
