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1、PAPER•OPENACCESSRelatedcontent-Two-dimensionalrectangulartantalumRobustlarge-gapquantumspinHallinsulatorsincarbidehalidesTaCX(X=Cl,Br,I):novellarge-gapquantumspinHallinsulatorschemicallydecoratedarsenenefilmsLiujiangZhou,WujunShi,YanSunetal.-TunablequantumspinHalleffectviastrainintwo-dimensionalarse
2、nenemonolayerTocitethisarticle:DongchaoWangetal2016NewJ.Phys.18033026Ya-pingWang,Chang-wenZhang,Wei-xiaoJietal.-Tetragonalbismuthbilayer:astableandrobustquantumspinhallinsulatorLiangzhiKou,XinTan,YandongMaetal.Viewthearticleonlineforupdatesandenhancements.Recentcitations-Theoreticalstudiesontunablee
3、lectronicstructuresandpotentialapplicationsoftwo-dimensionalarsenene-basedmaterialsJunZhaoetal-Quantumanomalous/valleyHalleffectandtunablequantumstateinhydrogenatedarsenenedecoratedwithatransitionmetalTianZhangetal-UnconventionalbandinversionandintrinsicquantumspinHalleffectinfunctionalizedgroup-Vbi
4、naryfilmsSheng-shiLietalThiscontentwasdownloadedfromIPaddress60.186.211.6on05/08/2018at13:31NewJ.Phys.18(2016)033026doi:10.1088/1367-2630/18/3/033026PAPERRobustlarge-gapquantumspinHallinsulatorsinchemicallyOPENACCESSdecoratedarsenenefilmsRECEIVED13November2015DongchaoWang1,2,LiChen1,2,ChangminShi1,Xi
5、aoliWang1,GuangliangCui1,PinhuaZhang1andREVISEDYeqingChen115February20161InstituteofCondensedMatterPhysics,LinyiUniversity,Shandong276000,People’sRepublicofChinaACCEPTEDFORPUBLICATION2SchoolofPhysics,ShandongUniversity,Shandong250100,People’sRepublicofChina1March2016PUBLISHEDE-mail:chenli@lyu.edu.cn
6、16March2016Keywords:quantumspinHallinsulator,arsenenefilm,chemicaldecoration,first-principlescalculationsOriginalcontentfromthisworkmaybeusedunderthetermsoftheCreativeAbstractCommonsAttribution3.0licence.Basedonfirst-principlescalculations,weproposeonenewcategoryoftwo-dimensionaltopologicalAnyfurtherdi
7、stributionofinsulators(2DTIs)inchemicallyfunctionalized(-CH3and-OH)arsenenefilms.Theresultsshowthatthisworkmustmaintainattributiontothethesurfacedecoratedarsenene(AsCH3andAsOH)filmsareintrinsic2DTIswith
