IGBT驱动电路分析

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1、IGBTGateDriverCalculationGateDriverRequirementWhatisthemostimportantrequirementforanIGBTdriver?GatePeakcurrentConditionsforasafetyoperationWhichgatedriverissuitableforthemoduleSKM200GB128D?Designparameters:fsw=10kHzRg=?reverserecoverycurrentDiodeshouldbe-1.5xIdiodeby80de

2、greecase130Ax1.5=195AGateresistorinrangeof“test–gateresistor”Howtofindtherightgateresistor?Rg=7OhmTwogateresistorsarepossibleforturnonandturnoffRon=7OhmRoff=10Ohm195A–maxreverserecoverycurrentDifferencebetweenTrench-andSPTTechnologyTrenchTechnologyneedsasmallerGatechargeDriv

3、erhastoprovideasmallerGatechargeSPTTechnologyneedsmoreGatechargecomparedtoTrenchTechnologyDriverhastoprovideahigherGatechargeDriverperformance–differentIGBTtechnologiesneedsdifferentgatechargeTrenchIGBTwithsamechipcurrentGatechargeis2.3uCDriverperformance–differentIGBTtechno

4、logiesneedsdifferentgatechargeSPTIGBTwithsamechipcurrentGatechargeis3uCDemandsforthegatedriverThesuitablegatedrivermustprovidetherequiredGatecharge(QG)–powersupplyofthedrivermustprovidetheaveragepowerAveragecurrent(IoutAV)–powersupplyGatepulsecurrent(Ig.pulse)–mostimportanta

5、ttheappliedswitchingfrequency(fsw)-8151390DeterminationofGateChargeGatecharge(QG)canbedeterminedfromfig.6oftheSEMITRANSdatasheetQG=1390nCThetypicalturn-onandturn-offvoltageofthegatedriverisVGG+=+15VVGG-=-8VCalculationoftheaveragecurrentCalculationofaveragecurrent:IoutAV=P/

6、UV=+Vg+[-Vg]withP=E*fsw=QG*V*fswIoutAV=QG*fsw=1390nC*10kHz=13.9mAAbsolutevaluePowersupplyrequirementsGatechargeThepowersupplyorthetransformermustprovidetheenergy(Semikronisusingpulsetransformerforthepowersupply,wemustconsiderthetransformedaveragepowerfromthetransformer)Av

7、eragecurrentIsrelatedtothetransformerCalculationofthepeakgatecurrentExaminationofthepeakgatecurrentwithminimumgateresistanceE.g.RG.on=RG.off=7Ig.puls≈V/RG+Rint=23V/7+1=2.9APulsepowerratingofthegateresistorPtotal–GateresistorPpulseGateresistor=IoutAVxVMoreinformation:The

8、problemoccurswhentheuserforgetsaboutthepeakpowerratingofthegateresistor.The