半导体词汇(英汉对照)

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1、2Wavemechanics波动力学Carriers载体Photon光子Electrons电子的Workfunction功函数Holes孔Wave-particledualityprinciple波粒二象性原则Effectivemass有效质量Probabilitydensityfunction概率密度函数Insulator绝缘子Pauliexclusionprinciple泡利不相容原理Semiconductor半导体Allowedenergyband允许的能带Directbandgapsemiconductor直接带隙半导体Forbi

2、ddenenergyband禁带Indirectbandgapsemiconductor间接带隙半导体Valenceband价带Fermi-Diracdistributionfunction费米-狄拉克分布函数Conductionband导带Fermienergy费米能级3Densityofelectrons(holes)电子密度（孔）Completeionization完全电离Intrinsiccarrierconcentration本征载流子浓度Compensatedsemiconductor补偿半导体IntrinsicFermile

3、vel内在的费米能级Chargeneutrality电荷中和Donorimpurity施主杂质Impurity()diffusioncoefficientimpurity()扩散系数Acceptorimpurity受主杂质Nondegeneratesemiconductor非退化半导体Extrinsicsemiconductor本征半导体Degeneratesemiconductor退化半导体Intrinsicsemiconductor本征半导体Majoritycarriers多数载流子Minoritycarriers少数载流子Elect

4、ron(Hole)concentration电子（空穴）的浓度4Transport运输Diffusion扩散Drift(current)漂移（电流）Diffusioncurrent扩散电流Hole(Electron)mobility孔（电子）迁移Carrierlifetime载流子寿命Hole(Electron)driftcurrentdensity孔（电子）漂移电流密度(In)Directbandgap（在）的直接带隙Scatteringeffects散射的影响Electrondiffusioncoefficient电子扩散系数Latt

5、icescattering晶格散射Holediffusioncoefficient孔扩散系数Ionizedimpurityscattering电离杂质散射Einsteinrelation爱因斯坦关系Conductivity导电性Carriergeneration载流子的产生Resistivity电阻率Carrierrecombination载流子复合Driftvelocitysaturation饱和漂移速度Excesscarrier过剩载流子Hallvoltage(effect)霍尔电压（效果）6Channelregion沟道区Princ

6、ipleofoperation操作原理Thresholdvoltage阈值电压MOScapacitorMOS电容器Energy-banddiagram能带图Chargedistribution电荷分布Accumulationlayer积累层Induceddepletionregion诱导的耗尽区Inversionlayer逆温层Inversionchargedensity反转电荷密度Workfunctiondifferences工作性能差异Polysilicongate多晶硅栅Oxidecharge氧化层电荷Flat-Bandvoltag

7、e平带电压Enhancement-modedevice增强模式器件Depletion-modedevice耗尽型器件Stronginversion较强的逆温Weakinversion弱反转Soure(drain)terminals源（漏）端子Long-channeldevice长通道设备(non)saturationregion（非）饱和区Conductionparameter传导参数Cutofffrequency截止频率Invertor逆变器Substratebiaseffects衬底偏压的影响Transconductance跨导7Co

8、nstant-FieldScaling恒定电场标度Channellengthscaling通道长度尺度Subthresholdcurrent亚阈值电流Subthresholdconductio