资源描述：
《硅上后热氧化钛膜制备氧化钛及其电学特性.pdf》由会员上传分享，免费在线阅读，更多相关内容在应用文档-天天文库。
1、第23卷第4期半导体学报Vol.23,No.42OO2年4月C~INESEJOURNALOFSEMICONDUCTORSApr.,2OO2=================================================================FabricationandElectricalpropertiesoftitaniumOxide%bythermallyOxidizingtitaniumonsilicon12111Zhu~uiwen,ZhaoBairu,LiuXiaoyan,KangJinfengand~an
2、Rugi(11nstituteofMicloelectlonics,Pekingnielsity,Beijing1OO871,China)(21nstituteofPhysics,TheChineseAcacemyofSciences,Beijing1OOO8O,China)Abstract;PolycrystallinetitaniumoxidefilmsarefabricatedonsiliconbythermallyoxidiZingtitanium.Thecurrent-voltageandcapacitance-voltagecha
3、racteristicsoftheAg/TiOZ/Si/Agcapacitorsaremeasured.Thethicknessofthetitaniumoxidefilmsarrangesfrom15Onmto25Onm,andtheirdielectricconstantsarewithin4O~87.Astheoxida-tiontimeisshortened,thefixedchargesofthetitaniumoxidefilmsbecomelessandtheleakagecurrentcharacteris-ticsbecom
4、ebetter.KeyWords;highkmaterials;thermallyoxidation;DCmagnetronsputteringEEACC;28OO;256OCLCnumber;TN386Documentcode;AArticleID;O253-4177(2OO2)O4-O337-O5ageinanunacceptableway.Thealternativesolu-1Introductiontionistousehighkdielectricmaterialswithhigherdielectricconstantforth
5、ickerthicknessofgatedi-ThesustainedgrowthinVLSItechnologyiselectricwiththesameelectricfield.Thealternativefueledbythecontinuedshrinkingoftransistorstogateoxideshavebeenstudiedforover4Oyears.eversmallerdimensions.ButthescalingMOSFETsSuchsubjectisdrawingmoreattentiontostudydo
6、wntosub-1OOnmfacethechallengeswhenSiO2presently[2].isusedasgatedielectric.Thethicknessofgateox-Avarietyofmetaloxides,includingAl2O3,ideinsub-1OOnmMOSFETsisprojectedtobeY2O3,Gd2O3,Ta2O5,La2O3,~fO2,ZrO2,andTiOZ,[1]mere1.5nm.Thustheelectronscantunnelhavebeensuggestedashigh-kre
7、placementsforsil-throughthegateoxideeasily,whichincreasestheicondioxide.Amongthemtitaniumoxidehasbeenstaticpower.Theboronpenetratesthroughthestudiedextensivelyforapplicationtoopticalandthinneroxide,whichresultsinahigherconcentra-[3~9]microelectronictechnologies.Titaniumreac
8、tstionofboroninthechannelregion.Then,achangewithoxygeneasily,andtitaniumoxidecanbe
