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1、JournaloftheEuropeanCeramicSociety23(2003)707–713www.elsevier.com/locate/jeurceramsocMicrostructuralandmorphologicalanalysisofpureandCe-dopedtindioxidenanoparticlesA.P.Maciela,P.N.Lisboa-Filhoa,E.R.Leitea,*,C.O.Paiva-Santosb,W.H.Schreinerc,Y.Manietteb,E.Lo
2、ngoaaCMDMC-LIEC-DQ-UFSCar,Sa˜oCarlos-SP,CEP13565-905,BrazilbIQ-UNESP-Araraquara-SP,CEP14800-900,BrazilcLSI-Depto.deFı´sica-UFPR,Curitiba-PR,CEP81531-990,BrazilReceived2December2001;receivedinrevisedform14May2002;accepted25May2002AbstractStructuralandmorpho
3、logicalstudiesinpureandCe-dopedtindioxidenanoparticleswithhighstabilityagainstparticlegrowthwereperformedinsamples,obtainedusingthepolymericprecursormethodandpreparedatdifferentannealingtemperatures.ACe-richsurfacelayerwasusedtocontroltheparticlesizeandstab
4、ilizeSnO2againstparticlegrowth.Theformationofthissegre-gatedlayercancontributetoadecreasedsurfaceenergy,actinginthedrivingforce,orreducingthesurfacemobility.OnlythecassiteriteSnOphasewasobservedbelow1000Candasecondaryphase(CeO)wasobservedfortheCe-dopedSnO
5、attem-222peratureshigherthan1000C,whende-mixingprocessoccurs.Theevolutionofcrystallitesize,microstrainandmorphologyofthenanoparticleswithannealingtemperatureswasinvestigatedbyX-raydiffraction(XRD),associatedtoRietveldrefinements,X-rayphotoelectronspectrosco
6、py(XPS)andtransmissionelectronmicroscopy(TEM).#2002ElsevierScienceLtd.Allrightsreserved.Keywords:SnO2;Powders-chemicalpreparation;X-raymethods;Precursors-organic1.IntroductionRecently,weobtainednanostructuredmaterialswithhighstabilityagainstparticlegrowthu
7、singametastableThedevelopmentofelectricalandelectronicdevicessolidsolution.3withnanometricdimensionsisagreatchallengeforTheparticlegrowthisdependentoftheparticletechnologicalapplications.1Theknowledgeofmicro-boundarymotion.4Theparticleboundaryvelocity,V,bs
8、tructuralpropertiesofnanostructuredsemiconductormaybeexpressedas,oxideshasafundamentalroleintheunderstandinganddevelopmentofnewelectronicdevices.Vb¼MbFbð1ÞSeveralstructuralandscientificphenomenainMate-rialsSci
