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ID:36629888
大小:2.38 MB
页数:32页
时间:2019-05-13
《毕业设计-英文文献及翻译-电气电子信息类专业》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、毕业设计(外文翻译材料)学院:专业:学生姓名:指导教师:电气与电子工程学院电子信息工程谭博学2008年4月外文翻译(原文)MinimizationandidentificationofconductedemissionbearingcurrentinvariablespeedinductionmotordrivesusingPWMinverterAbstract.Therecentincreaseintheuseofspeedcontrolofacinductionmotorforvariablespeeddriveusingpulsewidthmodulation(P
2、WM)inverterisduetotheadventofmodernpowerelectronicdevicesandintroductionofmicroprocessors.Therearemanyadvantagesofusingacinductionmotorforspeedcontrolapplicationsinprocessandaerospaceindustries,butduetofastswitchingofthemodernpowerelectronicdevices,theparasiticcouplingproducesundesirable
3、effects.Theundesirableeffectsincluderadiatedandconductedelectromagneticinterference(EMI)whichadverselyaffectnearbycomputers,electronic/electricalinstrumentsandgiverisetotheflowofbearingcurrentintheinductionmotor.Duetotheflowofbearingcurrentintheinductionmotor,electricaldischargemachining
4、takesplaceintheinnerraceofthebearingwhichreducesthelifeofthebearing.Inhighpowerconvertersandinverters,theconductedandradiatedemissionsbecomeamajorconcern.Inthispaper,identificationofbearingcurrentduetoconductedemission,themeasurementofbearingcurrentinamodifiedinductionmotorandtominimizet
5、hebearingcurrentarediscussed.Thestandardcurrentprobe,thestandardlineimpedancestabilizationnetwork(LISN)),theelectronicsinterfacecircuitsareusedtomeasurehighfrequencycommonmodecurrent,bearingcurrentandtominimizetheconductednoisefromthesystem.TheLISNwillpreventtheEMInoiseenteringthesystemf
6、romthesupplysourcebyconductivemethods,atthesametimepreventstheEMIgeneratedifanyduetoPWM,fastswitchinginthesystem,willnotbeallowedtoenterthesupplyline.ForcomparingtheresultswithFederalCommunicationsCommission(FCC)andSpecialCommitteeonRadioInterference(CISPR)standards,thegraphsareplottedwi
7、thfrequencyVs,linevoltageindBμV,commonmodevoltageindBμVandthebearingcurrentindBμAwithoutandwithminimizingcircuits.31外文翻译(原文)Keywords.EMI;a.c.drives;bearingcurrent.1.IntroductionWiththedevelopmentofpowerelectronicdevicesliketheinsulatedgatebi-polartransistor(IGBT),thepower
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