LTPS离子植入技术介绍ppt课件.ppt

《LTPS离子植入技术介绍ppt课件.ppt》由会员上传分享，免费在线阅读，更多相关内容在教育资源-天天文库。

1、IonImplanterIntroductionDiffusionVSImplantationWhatisIonImplantForimpuritydopecontrolinfabricationofsiliconcircuitordevicePreciselycontrolimpuritydopingandprofileLowTemperatureOperationOtherImplantProfileandActiveImplantProfileImplantandActive氣體的平均自由動徑氣體的

2、平均自由動徑(λ)定義為平均一個粒子在碰撞其他粒子前所走的距離。λ=2.33x10-20T/Pd02(cm)(d0：分子直徑)在室溫時，平均自由徑與壓力間關係λ=5x10-3/P(cm)(p：torr)以25∘C之空氣，在10-3torr條件下λ=5x10-3/1x10-3=5(cm)SystemOverviewIonsourceExtractionRegionAnalyzingMagnetRegionQuadrapoleandBeamFocusScanSystemBeamMonitorandDosime

3、terNeutralizingSystemSystemSpeciesP+dopantB:Boron(B2H6,BF3)In:Indium(InCl,InO3)N+dopantP:Phosphorus(PH3,P2O5)As:Arsenic(AsH3,As2O3)OthersSi:Silicon(SiH4)Ge:Germanium(GeH4)IonSourceDCDischargeFreemantypeBernastypeBuckettypeRFDischargeICPFreemantypeIonSourc

4、e-ParametersGasFlow--highgasflowresultinginhigharcingrate,highcondensationrate,highcostandpoorvacuum.ArcVoltage--theelectronsenergytoionizeatomandtheenergythepositiveionimpactthefilament.Higherarcvoltage,higherbeamIandshortsourcelifetime.Filament--SourceM

5、agnet--BernastypeBernastype-pictureBuckettypeRPICPTypeBF3IonizationSpeciesPH3IonizationSpeciesRFIonizationSpeciesB2H6→BHx++B2Hx++Hx+(mainB2Hx+)PH3→PHx++P2Hx++Hx+(mainPHx+)P2Hx/PHx<10%ExtractionRegionExtractionRegionIIElectricalFieldBeamCurrentAnalyzingMag

6、netRegionMassResolutionBeamQualityMassResolutionX:M/ΔM≧10Y:M/ΔM≧2BPcrosscontaminationX:PM(31),range[29.4,32.6]BM(11),range[10.4,12.6]Y:PM(31),range[23.3,37.7]BM(11),range[7.75,14.25]BF+P+QuadrapoleandBeamFocusFocus&UniformityControlScanSystemIVerticalSc

7、anSystemIIHorizontalScansystemIIISteepSlopeBeamMonitorDosimeterNeutralizingSystemSpaceChargeNeutralizationProcessConceptHotCarrierEffectChannelEffectChargingEffectPressureandOutgassingCoolingHotcarrierEffectHotcarriereffectsaremoresevereinn-channeltransis

8、torsduetothehigherimpactionizationrateofelectronsvs.holesHotCarrierEffectSolutionLDD(LightDopedDrain)2.LowerVdsChannelEffectchanneleffectcanresultsinpoordopingprofileanddepthcontrol,aswellasjunctiondepthshiftChannel